smg2305p -4.5a , -20v , r ds(on) 43 m ? p-channel enhancement mosfet elektronische bauelemente 8-aug-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. s c - 59 top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize a hig h cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features low r ds(on) provides higher efficiency and extends battery life. low thermal impedance copper leadframe sc-59 saves board space. fast switching speed. high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as co mputers, printers, pcmcia cards, cellular and cordless telep hones. package information package mpq leader size sc-59 3k 7 inch absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds -20 v gate-source voltage v gs 8 v continuous drain current 1 t a =25c i d -4.5 a t a =70c -3.6 pulsed drain current 2 i dm -10 a power dissipation 1 t a =25c p d 1.25 w t a =70c 0.8 operating junction and storage temperature range t j , t stg -55~150 c thermal resistance data maximum junction to ambient 1 t Q 5 sec r ja 100 c / w steady-state 150 notes: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction temperat ure. ref. millimeter ref. millimeter min. max. min. max. a 2.70 3.10 g 0.10 ref. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50
smg2305p -4.5a , -20v , r ds(on) 43 m ? p-channel enhancement mosfet elektronische bauelemente 8-aug-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min typ max unit test condition static gate-threshold voltage v gs(th) -0.7 - - v v ds =v gs , i d = -250 a gate-body leakage i gss - - 100 na v ds =0, v gs = 8v zero gate voltage drain current i dss - - -1 a v ds = -16v, v gs =0 - - -10 v ds = -16v, v gs =0, t j =55c on-state drain current 1 i d(on) -10 - - a v ds = -5v, v gs = -4.5v drain-source on-resistance 1 r ds(on) - - 43 m v gs = -4.5v, i d = -3.6a - - 54 v gs = -2.5v, i d = -3.1a - - 120 v gs = -1.8v, i d = -2.7a forward transconductance 1 g fs - 12 - s v ds = -5v, , i d = -1.25a diode forward voltage v sd - -0.6 - v i s = -0.46a, v gs =0 dynamic 2 total gate charge q g - 12 - nc i d = -2.4a v ds = -5v v gs = -4.5v gate-source charge q gs - 2 - gate-drain charge q gd - 2 - turn-on delay time td (on) - 6.5 - ns i l = -1a, v dd = -10v, v gen = -4.5v, r g =6 rise time t r - 20 - turn-off delay time td (off) - 31 - fall time t f - 21 - notes: 1. pulse test pw Q 300 us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
|
